CMT01N60GN92,CMT01N60GN92 pdf中文资料,CMT01N60GN92引脚图,CMT01N60GN92电路

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CMT01N60

P

OWER

F

IELD

E

FFECT

T

RANSISTOR

GENERAL DESCRIPTION

This high voltage MOSFET uses an advanced termination

scheme to provide enhanced voltage-blocking capability

without degrading performance over time. In addition, this

advanced MOSFET is designed to withstand high energy in

avalanche and commutation modes. The new energy

efficient design also offers a drain-to-source diode with a

fast recovery time. Designed for high voltage, high speed

switching applications in power supplies, converters and

PWM motor controls, these devices are particularly well

suited for bridge circuits where diode speed and

commutating safe operating areas are critical and offer

additional and safety margin against unexpected voltage

transients.

FEATURES

Robust High Voltage Termination

Avalanche Energy Specified

Source-to-Drain Diode Recovery Time Comparable to a

Discrete Fast Recovery Diode

Diode is Characterized for Use in Bridge Circuits

I

DSS

and V

DS

(on) Specified at Elevated Temperature

PIN CONFIGURATION

TO-251

TO-252

TO-92

SYMBOL

Front View

Front View

SOURCE

Front View

D

SOURCE

SOURCE

DRAIN

GATE

GATE

DRAIN

GATE

DRAIN

G

1

2

3

S

N-Channel MOSFET

1

2

3

1

2

3

ABSOLUTE MAXIMUM RATINGS

Rating

Drain to Current

－

Continuous

－

Pulsed

Gate-to-Source Voltage

－

Continue

－

Non-repetitive

Total Power Dissipation

TO-251/252

Operating and Storage Temperature Range

Single Pulse Drain-to-Source Avalanche Energy

－

T

J

= 25℃

(V

DD

= 100V, V

GS

= 10V, I

AS

= 2A, L = 10mH, R

G

= 25Ω)

Thermal Resistance

－

Junction to Case

－

Junction to Ambient

Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds

θ

JC

θ

JA

T

L

1.0

62.5

260

℃

℃/W

T

J

, T

STG

E

AS

Symbol

I

D

I

DM

V

GS

V

GSM

P

D

50

-55 to 150

20

℃

mJ

Value

1.0

9.0

±30

±40

V

V

W

Unit

A

2006/10/11

Rev. 1.6

Champion Microelectronic Corporation

Page 1

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